Capacitance and doping profiles of ion-implanted, buried-channel MOSFETs
- 31 January 1979
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (1), 47-54
- https://doi.org/10.1016/0038-1101(79)90170-9
Abstract
No abstract availableKeywords
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