Optical investigation of Ni impurity in ZnSe under hydrostatic pressure
- 1 April 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 101 (1-4), 466-469
- https://doi.org/10.1016/0022-0248(90)91016-j
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Transition-metal impurities in semiconductors and heterojunction band lineupsPhysical Review B, 1988
- Identification of spin, charge states and optical transitions of vanadium impurities in GaAsSemiconductor Science and Technology, 1988
- Theoretical investigation of the electrical and optical activity of vanadium in GaAsPhysical Review B, 1986
- Prediction of a low-spin ground state in the GaAs:impurity systemPhysical Review B, 1986
- Deep-Level Impurities: A Possible Guide to Prediction of Band-Edge Discontinuities in Semiconductor HeterojunctionsPhysical Review Letters, 1985
- Charge transfer in chromium-doped GaAsPhysical Review B, 1981
- Photoionisation of nickel in ZnS and ZnSeJournal of Physics C: Solid State Physics, 1980
- Crystal field spectra of 3dnimpurities in zinc selenideJournal of Physics C: Solid State Physics, 1971
- Effect of Pressure on Tetrahedral Ni++ and Co++ ComplexesThe Journal of Chemical Physics, 1961
- Paramagnetic Resonance in SolidsPhysics Today, 1960