Growth of HgCdTe epilayers with any predesigned compositional profile by laser molecular beam epitaxy

Abstract

HgCdTe epitaxial layers with complex composition profiles were grown by laser molecular beam epitaxy. Composition control was achieved by keeping the Te and Hg beams constant while modulating the CdTe evaporation rate by changing the laser conditions. Three approaches for evaporation rate modulation were investigated. Evaporation rate control by means of the laser repetition rate was found the most practical. Various graded composition HgCdTe epilayers were grown. The measured and intended profiles were found to be in good agreement.