Optically induced absorption modulation in GaAs doping superlattices
- 8 September 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (10), 590-592
- https://doi.org/10.1063/1.97050
Abstract
Optically generated carriers are used to modulate below-gap absorption in GaAs doping superlattices. Room-temperature modulation is observed when the potential wells are deep (≳1 eV). Spatial separation of the electrons and holes leads to slow recovery of the absorption following generation of the carriers. The amplitude of the absorption modulation shows only a weak dependence on the excitation intensity.Keywords
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