Low-current proton-bombarded (GaAl)As double-heterostructure lasers
- 15 August 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (4), 327-330
- https://doi.org/10.1063/1.90358
Abstract
Low‐current cw stripe double‐heterostructure (DH) lasers have been realized using a shallow proton‐bombardment technique; unlike usual proton DH lasers they involve a resistive p (GaAl)As confinement layer and a rather highly doped GaAs active region both to reduce spreading current and stripe injected carrier outdiffusion. Threshold currents are on the order of 50 mA for a 12‐μm‐wide by 200‐μm‐long cavity.Keywords
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