Some observations on the dislocation etching of GaAs1-χPχ epitaxial layers
- 1 March 1971
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 8 (3), 269-275
- https://doi.org/10.1016/0022-0248(71)90068-6
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Compositional Inhomogeneities in GaAs1−xPx Alloy Epitaxial LayersJournal of Applied Physics, 1968
- Dislocations and their Relation to Irregularities in Zinc-Diffused GaAsP p-n JunctionsJournal of Applied Physics, 1968
- The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1966
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965
- Dislocation Etch Pits in GaAsJournal of Applied Physics, 1964
- Etch Pits in Gallium ArsenideJournal of Applied Physics, 1960