Diffusion in Silicon. I. Effect of Dislocation Motion on the Diffusion Coefficients of Boron and Phosphorus in Silicon

Abstract

A simple dislocation-enhanced diffusion model is proposed to explain the anomalous diffusion of phosphorus and boron in silicon. Jogs created by dislocation intersections undergo climb and emit vacancies as they are carried into the crystal on gliding diffusion-induced dislocations. It is shown that the resulting increase in the vacancy concentration may be fully adequate, when occurring in conjunction with the field-aided diffusion mechanism, to explain the enhanced diffusion.