Secondary-ion mass spectrometry study of the migration of Si in planar-doped GaAs and Al0.25Ga0.75As
- 2 October 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (14), 1445-1447
- https://doi.org/10.1063/1.101582
Abstract
We have investigated the effect of substrate temperature Ts during growth by molecular beam epitaxy on the migration of Si atoms in δ‐(or planar) doped GaAs and Al0.25Ga0.75As using secondary‐ion mass spectrometry (SIMS). Our results for δ‐doped GaAs illustrate a measurable spread of Si that increases by ∼80 Å as Ts is varied from 580 to 640 °C. For comparable Ts, the Si spreads further (by ∼350 Å) in δ‐doped Al0.25Ga0.75As. For TsDX center, are believed to be responsible for the latter observation.Keywords
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