MOS‐type capacitor structures were fabricated employing a composite polycrystalline silicon/refractory metal silicide electrode. Electrical characterization of oxidized structures has revealed that their behavior, compared with that of polysilicon devices, can remain unaltered by the addition of the conductive tungsten or molybdenum silicide film (other than an approximately 10–15× reduction in net resistivity of the electrode material). This compatibility, however, requires a minimum polysilicon thickness, or else an abnormally high incidence of shorting occurs following oxidation. The required thickness of the underlying polysilicon is larger than that required only to provide sufficient silicon for the oxidation process.