Independent determination of composition and relaxation of partly pseudomorphically grown Si-Ge layers on silicon by a combination of standard x-ray diffraction and transmission electron microscopy measurements
- 26 April 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (17), 2051-2053
- https://doi.org/10.1063/1.109476
Abstract
No abstract availableKeywords
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