GaInAs/InP PIN photodiodes with low dark currents and capacitances have been successfully fabricated from material grown by atmospheric-pressure MOVPE. Both Zn-diffused and grown-in p+-n homojunction material have provided yields of over 70% for devices with leakage currents less than 20 nA. This growth technique, therefore, looks particularly appropriate for a reproducible, high-yield and inexpensive method of photodetector production.