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C.W. operation of ion-implanted GaAs read-type IMPATT diodes
Home
Publications
C.W. operation of ion-implanted GaAs read-type IMPATT diodes
C.W. operation of ion-implanted GaAs read-type IMPATT diodes
JB
J.J. Berenz
J.J. Berenz
RY
R.S. Ying
R.S. Ying
DL
D.H. Lee
D.H. Lee
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1 January 1974
journal article
Published by
Institution of Engineering and Technology (IET)
in
Electronics Letters
Vol. 10
(9)
,
157-158
https://doi.org/10.1049/el:19740119
Abstract
Epitaxial and ion-implantation techniques have been combined to form a high/low doping profile for GaAs Schottky-barrier Read-type IMPATT diodes. A c.w. output power of 1.1 W with 25% conversion efficiency was obtained at 11 GHz.
Keywords
READ TYPE DIODE
GAAS
SOLID STATE MICROWAVE DEVICES
IMPATT DIODES
MICROWAVE OSCILLATORS
11 GHZ
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Cited by 10 articles