Luminescence Studies of MBE Grown SI/SIGE Quantum Wells
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Band gap luminescence in pseudomorphic Si1−xGex quantum wells grown by molecular beam epitaxyThin Solid Films, 1992
- Photoluminescence of confined excitons in MBE-grown Si1 − xGex/Si(100) single quantum wellsThin Solid Films, 1992
- Systematic blue shift of exciton luminescence in strained Si1 −s xGex/Si quantum well structures grown by gas source silicon molecular beam epitaxyThin Solid Films, 1992
- Valence-band offsets at strained Si/Ge interfacesPhysical Review B, 1991
- Electroluminescence from a pseudomorphic Si0.8Ge0.2 alloyApplied Physics Letters, 1991
- Well-resolved band-edge photoluminescence of excitons confined in strained quantum wellsPhysical Review Letters, 1991
- Theoretical calculations of heterojunction discontinuities in the Si/Ge systemPhysical Review B, 1986
- Dislocation-related photoluminescence in siliconApplied Physics A, 1985
- Exciton binding energy in quantum wellsPhysical Review B, 1982
- Semiconductor StatisticsPublished by Elsevier ,1962