Raman and high-pressure photoluminescence studies on porous silicon
- 15 November 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (10), 4963-4965
- https://doi.org/10.1063/1.352066
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- The origin of visible luminescencefrom “porous silicon”: A new interpretationSolid State Communications, 1992
- Correlation of Raman and photoluminescence spectra of porous siliconApplied Physics Letters, 1992
- Visible light emission due to quantum size effects in highly porous crystalline siliconNature, 1991
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- The effects of microcrystal size and shape on the one phonon Raman spectra of crystalline semiconductorsSolid State Communications, 1986
- Specific volume measurements of Cu, Mo, Pd, and Ag and calibration of the ruby R1 fluorescence pressure gauge from 0.06 to 1 MbarJournal of Applied Physics, 1978
- Adiabatic bond charge model for the phonons in diamond, Si, Ge, andPhysical Review B, 1977