The guard-ring termination for the high-voltage SiC Schottky barrier diodes
- 1 July 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 16 (7), 331-332
- https://doi.org/10.1109/55.388724
Abstract
In this report, we propose the guard-ring structure as the edge termination for the high-voltage SiC Schottky barrier diodes. The local oxidation process is used to form the mesa of a p-n junction as the guard-ring. The comparison between the Al/Ti Schottky barrier diodes with and without the guard-ring indicates the effectiveness of the guard-ring to relax the electric field, from the results that the breakdown voltage is about two times larger with high yield.<>Keywords
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