Mesotaxy: Single-crystal growth of buried CoSi2 layers
- 12 January 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (2), 95-97
- https://doi.org/10.1063/1.97830
Abstract
Buried single‐crystal CoSi2 layers in silicon have been formed by high dose implantation of cobalt followed by annealing. These layers grow in both the (100) and (111) orientations—those in (111) have better crystallinity, but those in (100) are of higher electrical quality. Electrical transport measurements on the layers give values for the resistance ratios and superconducting critical temperatures that are better than the best films grown by conventional techniques and comparable to bulk CoSi2.Keywords
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