DC and microwave characteristics of an In0.53Ga0.47As/In0.52Al0.48As modulation-doped quasi-MISFET

Abstract

The DC and microwave performance of a modulation-doped InGaAs/InAlAs quasi-MISFET structure, grown by molecular beam epitaxy, is reported. Improved performance is obtained with the incorporation of Ti in the source-drain metallisation with which contact resistances as low as 0.1 Ωmm are measured. An extrinsic transconductance of 310mS/mm and a best value of fT=32 GHz in a 1.0 μ-gate device are measured at 300 K.