Predicted band gap of the new semiconductor SiGeSn
- 1 January 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (1), 539-541
- https://doi.org/10.1063/1.347704
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Single-crystal Sn/Ge superlattices on Ge substrates: Growth and structural propertiesApplied Physics Letters, 1990
- Optical waveguiding in a single-crystal layer of germanium silicon grown on siliconOptics Letters, 1990
- Silicon/germanium strained layer superlatticesJournal of Crystal Growth, 1989
- New semiempirical construction of the Slater-Koster parameters for group-IV semiconductorsPhysical Review B, 1983
- First-principles electronic structure of Si, Ge, GaP, GaAs, ZnS, and ZnSe. II. Optical propertiesPhysical Review B, 1981
- First-principles electronic structure of Si, Ge, GaP, GaAs, ZnS, and ZnSe. I. Self-consistent energy bands, charge densities, and effective massesPhysical Review B, 1981
- Electroreflectance and band structure of gray tinSolid State Communications, 1966
- Reflectivity of Gray Tin Single Crystals in the Fundamental Absorption RegionPhysical Review B, 1962
- Magnetoresistance of Oriented Gray Tin Single CrystalsPhysical Review B, 1961