Photo-induced ESR and optical absorption edge shift in amorphous Ge-S films
- 31 July 1978
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 27 (3), 223-227
- https://doi.org/10.1016/0038-1098(78)90023-6
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Chemical trends for localized gap states in amorphous semiconductorsSolid State Communications, 1978
- The reversible photostructural change studied by ESR of Mn2+ in As2Se3 filmsSolid State Communications, 1977
- Optically induced metastable paramagnetic states in amorphous semiconductorsPhysical Review B, 1977
- A reversible optical transition in SeGe and PSeGe glassesJournal of Non-Crystalline Solids, 1976
- Reversible photoinduced change in intermolecular distance in amorphous As2S3 networkApplied Physics Letters, 1975
- ESR in GeS glassesSolid State Communications, 1973
- Nature of Localized States in Amorphous Semiconductors—A Study by Electron Spin ResonancePhysical Review B, 1973