Auger recombination in InAs, GaSb, InP, and GaAs

Abstract

The Auger recombination lifetimes of the excess carriers in p‐type InAs, GaSb, InP, and GaAs are calculated. The calculation is carried out along the line of Beatie and Smith taking into account spin split‐off band effect. It is concluded that the spin split‐off band effect plays a very important role on the Auger recombination in p‐type InAs, GaSb, InP, and GaAs whose spin split‐off energies are nearly equal to or smaller than the band‐gap energies.