Study on Narrow-Stripe Polycrystalline Silicon Thin-Film Transistors
- 1 October 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (10R), 1937-1941
- https://doi.org/10.1143/jjap.27.1937
Abstract
N-channel thin-film transistors which have narrow channel stripes (narrow-stripe TFT's) have been proposed to improve the characteristics of poly-Si TFT's. The carrier mobility of narrow-stripe TFT's is larger than that of conventional structure TFT's. It is found that the mobility increase is due to the reduction of the potential-barrier height at the poly-Si grain boundary and the potential-barrier height decreases with decreasing channel stripe width. Furthermore, after hydrogen-plasma treatment, the carrier mobility in narrow-stripe TFT's with 0.9µm wide stripes becomes 7.4 cm2/(V·s) which is more than three times that of conventional TFT's.Keywords
This publication has 15 references indexed in Scilit:
- Effects of grain boundaries on the channel conductance of SOl MOSFET'sIEEE Transactions on Electron Devices, 1983
- Glow discharge polycrystalline silicon thin-film transistorsApplied Physics Letters, 1983
- Conductivity behavior in polycrystalline semiconductor thin film transistorsJournal of Applied Physics, 1982
- Application of amorphous silicon field effect transistors in addressable liquid crystal display panelsApplied Physics A, 1981
- Studies of the hydrogen passivation of silicon grain boundariesJournal of Applied Physics, 1981
- Enhanced conductivity in plasma-hydrogenated polysilicon filmsApplied Physics Letters, 1980
- High voltage CdSe thin film transistorJournal of Vacuum Science and Technology, 1979
- cw laser recrystallization of 〈100〉 Si on amorphous substratesApplied Physics Letters, 1979
- The electrical properties of polycrystalline silicon filmsJournal of Applied Physics, 1975
- Hall Mobility in Chemically Deposited Polycrystalline SiliconJournal of Applied Physics, 1971