Monolithic integration of an injection laser and a metal semiconductor field effect transistor
- 1 April 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (7), 430-431
- https://doi.org/10.1063/1.90824
Abstract
A new laser structure, the ’’T‐laser’’, has been monolithically integrated with a MESFET on a semi‐insulating GaAs substrate. Integration is achieved by means of a compatible structure in which the optically active layer of the laser also serves as the electrically active layer of the MESFET. Direct modulation of the laser by means of the transistor is demonstrated.Keywords
This publication has 6 references indexed in Scilit:
- High temperature single-mode cw operation with a junction-up TJS laserApplied Physics Letters, 1978
- Integration of an injection laser with a Gunn oscillator on a semi-insulating GaAs substrateApplied Physics Letters, 1978
- GaAs-GaAlAs injection lasers on semi-insulating substrates using laterally diffused junctionsApplied Physics Letters, 1978
- Double-heterostructure GaAs-GaAlAs injection lasers on semi-insulating substrates using carrier crowdingApplied Physics Letters, 1977
- Microwave Field-Effect Transistors - 1976IEEE Transactions on Microwave Theory and Techniques, 1976
- Mesa-stripe-geometry double-heterostructure injection lasersIEEE Journal of Quantum Electronics, 1973