Planar enhancement mode two-dimensional electron gas FET associated with a low AlGaAs surface potential

1 January 1982

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 18 (2), 103-105
https://doi.org/10.1049/el:19820070

Abstract

Planar enhancement mode two-dimensional electron gas FETs (TEGFETs) are described. Certain aspects of their high performances are interpreted as being due to the low surface potential (0.33 eV) of the AlGaAs uppermost layer.

Keywords

PLANAR ENHANCEMENT MODE
LOW SURFACE POTENTIAL
III-V SEMICONDUCTORS
TWO-DIMENSIONAL ELECTRON GAS FET
ALGAAS UPPERMOST LAYER
TEGFET

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