Correlation of stress with light-induced defects in hydrogenated amorphous silicon films
- 13 October 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (15), 951-953
- https://doi.org/10.1063/1.97493
Abstract
No correlation was found between the stress in hydrogenated amorphous silicon films and the light‐induced effect, as measured by the photoconductivity. An equation is derived for calculation of the external stress applied to a film. The light‐induced degradation in a ‘‘zero‐stress’’ film (one removed from the substrate) was shown to be equivalent to that of an as‐deposited film.Keywords
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