The temperature dependence of the electrical resistivity and the magnetic susceptibility has been investigated for the compounds UAl 2 , UAl 3 and the isostructural compounds UX 3 ( X = Ga , In , Si , Ge , Sn ), and finally for UAl 4 and UGa 2 . The influence of a variable U concentration has been studied for the pseudobinary compounds U 1− x Y x Al 2 and U 1− x Y x Ga 2 . The results are discussed in terms of a localized‐spin‐fluctuations model. The differences and the similarities between the electrical properties of these U compounds and Ce compounds, such as CeAl 2 and CeAl 3 , are briefly discussed.