FT-IR study of the surface properties of silicon nitride
- 28 February 1986
- journal article
- Published by Elsevier in Materials Chemistry and Physics
- Vol. 14 (2), 123-140
- https://doi.org/10.1016/0254-0584(86)90077-5
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- The Variation of Physical Properties of Plasma‐Deposited Silicon Nitride and Oxynitride with Their CompositionsJournal of the Electrochemical Society, 1984
- Hydrogen cyanide synthesis catalyzed by alumina in the presence of hydrogen sulfide under simultaneous formation of aluminum nitrideIndustrial & Engineering Chemistry Product Research and Development, 1984
- IR Study of Amorphous Silicon Nitride FilmsApplied Spectroscopy, 1984
- Effect of Nitridation of Silicon Dioxide on Its Infrared SpectrumJournal of the Electrochemical Society, 1984
- Infrared Characterization of α‐ and β‐Crystalline Silicon NitrideJournal of the Electrochemical Society, 1983
- Chemically Bound Hydrogen in CVD Si3 N 4: Dependence on NH 3 / SiH4 Ratio and on AnnealingJournal of the Electrochemical Society, 1977
- Characterization of Silicon Nitride FilmsJournal of the Electrochemical Society, 1971
- Silicon Nitride Films by Reactive SputteringJournal of the Electrochemical Society, 1967
- Infrared Study of OH and NH2 Groups on the Surface of a Dry Silica AerogelThe Journal of Physical Chemistry, 1966
- An Infrared Study of the Water-Silica Gel SystemThe Journal of Physical Chemistry, 1959