Role of interfaces on the performance and stability of amorphous silicon-germanium alloy p-i-n solar cells

Abstract

The performance and stability of a‐SiGe:H single junction p‐i‐n solar cells with interfacial layers at the p/i and the i/n interfaces are reported. It is found that interfacial layers have a strong influence both on the initial performance as well as on the stability of these devices. The device structure, which consists of glass, conductive transparent oxide (SnO₂ ), p(a‐SiC:H), a‐Si:H (buffer layer), graded interface layer (1.7 eV–1.5 eV), i (2500 Å, 1.5 eV), inverse graded interface layer (1.5 eV–1.7 eV), and n (a‐Si:H), results in the highest long‐term performance. This device structure has resulted in a conversion efficiency of 10.1% with short‐circuit current density of 20 mA/cm² .