Glow-discharge amorphous silicon: Growth process and structure
- 31 December 1987
- journal article
- Published by Elsevier in Materials Science Reports
- Vol. 2 (4), 139-184
- https://doi.org/10.1016/s0920-2307(87)80003-8
Abstract
No abstract availableThis publication has 100 references indexed in Scilit:
- Interpretation of 29Si nuclear magnetic resonance spectra of amorphous hydrogenated siliconJournal of Applied Physics, 1986
- Charge transfer doping in amorphous semiconductor superlatticesApplied Physics Letters, 1984
- Optical absorption, photoconductivity, and photoluminescence of glow-discharge amorphousalloysPhysical Review B, 1982
- Modifications in optoelectronic behavior of plasma-deposited amorphous semiconductor alloys via impurity incorporationJournal of Non-Crystalline Solids, 1980
- Influence of the plasma parameters on the properties of a-Si films prepared by glow-discharge deposition methodJournal of Non-Crystalline Solids, 1980
- Plasma spectroscopy control and analysis of a-Si:H depositionJournal of Non-Crystalline Solids, 1980
- The hydrogen content of a-Ge:H and a-Si:H as determined by ir spectroscopy, gas evolution and nuclear reaction techniquesJournal of Non-Crystalline Solids, 1980
- Hydrogen content, electrical properties and stability of glow discharge amorphous siliconSolar Energy Materials, 1979
- Optical properties and hydrogen concentration in amorphous siliconThin Solid Films, 1979
- The preparation of thin layers of Ge and Si by chemical hydrogen plasma transportSolid-State Electronics, 1968