Internal photo-effects in graded-gap semiconductors—I. Excess-carrier distributions∗
- 31 July 1980
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 20 (4), 257-269
- https://doi.org/10.1016/0020-0891(80)90036-6
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- PEM-effect in graded-gap semiconductorSolid State Communications, 1978
- Electrical and photoelectric properties of graded-gap epitaxial CdxHg1−xTe layersThin Solid Films, 1977
- A Warm Carrier Effect in Junctions and Graded Mixed SemiconductorsPhysica Status Solidi (a), 1975
- Nonlinear conductivity tensor in graded mixed semiconductorsPhysical Review B, 1975
- Carrier distribution in graded-band-gap semiconductors under asymmetric band-edge gradientsPhysical Review B, 1974
- Recombination mechanisms in 8–14-μ HgCdTeJournal of Applied Physics, 1973
- Photovoltaic effects in graded bandgap structuresIEEE Transactions on Electron Devices, 1971
- Photomagnetoelectric Effect in Graded Band-Gap SemiconductorsPhysical Review B, 1971
- Theory of Electronic States and Transport in Graded Mixed SemiconductorsPhysical Review B, 1969
- Transport of photocarriers in CdxHg1−xTe graded-gap structuresSolid-State Electronics, 1968