The infrared Faraday effect due to free carriers in indium antimonide
- 1 January 1959
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 8, 323-326
- https://doi.org/10.1016/0022-3697(59)90351-8
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Infrared Resonant Absorption from Bound Landau Levels in InSbPhysical Review B, 1957
- Determination of Optical Constants and Carrier Effective Mass of SemiconductorsPhysical Review B, 1957
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957
- Infrared Cyclotron Resonance in Bi, InSb, and InAs with High Pulsed Magnetic FieldsPhysical Review B, 1956
- Cyclotron Resonance at Infrared Frequencies in InSb at Room TemperaturePhysical Review B, 1956
- The Infra-Red Faraday Effect due to Free Carriers in a SemiconductorProceedings of the Physical Society. Section B, 1955
- Faraday Effect in Germanium at Room TemperaturePhysical Review B, 1955
- Cyclotron and Spin Resonance in Indium AntimonidePhysical Review B, 1955