SiO 2 / 6H-SiC (0001)3×3 initial interface formation by Si overlayer oxidation
- 22 November 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (21), 3360-3362
- https://doi.org/10.1063/1.125351
Abstract
[[abstract]]We investigate the initial oxidation and SiO2/6H-SiC interface formation by core level photoemission spectroscopy using synchrotron radiation. The results indicate that the direct oxidation of the 6H-SiC(0001)3x3 surface leads to SiO2 formation at low temperatures (500 degrees C) with a nonabrupt interface having significant amounts of mixed (Si-O-C) and intermediate (Si3+,Si2+,Si+) oxidation products. In contrast, C-free and a much more abrupt SiO2/6H-SiC(0001) interface formation is achieved when predeposited Si overlayer is thermally oxidized at low oxygen exposures and low temperatures (500 degrees C).[[fileno]]2060117010039[[department]]工程與系統科學Keywords
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