Carrier fluctuation noise in a MOSFET channel due to traps in the oxide
- 1 June 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (6), 901-903
- https://doi.org/10.1016/0038-1101(78)90317-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Characterization of low 1/f noise in MOS transistorsIEEE Transactions on Electron Devices, 1971
- Surface state related noise in MOS transistorsSolid-State Electronics, 1970
- Theory of low frequency noise in Si MOST'sSolid-State Electronics, 1970
- Low frequency noise in MOS transistors—I TheorySolid-State Electronics, 1968
- Calculation of the Space Charge, Electric Field, and Free Carrier Concentration at the Surface of a SemiconductorJournal of Applied Physics, 1955