Metalorganic Molecular Beam Epitaxy of Zn1-xCdxSySe1-y Quaternary Alloys on GaAs Substrate
- 1 September 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (9B), L1624
- https://doi.org/10.1143/jjap.30.l1624
Abstract
The successful growth of Zn1-x Cd x S y Se1-y (ZnCdSSe) quaternary alloys by metalorganic molecular beam epitaxy (MOMBE) is reported. Layer-by-layer growth was confirmed for the first time by monitoring the intensity oscillation of a specular beam in a reflection high-energy diffraction (RHEED) pattern. ZnCdSSe layers coherently grown on GaAs exhibited good crystallographic and optical properties.Keywords
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