Pulsed-electron-beam annealing of polycrystalline-silicon films
- 1 August 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (3), 282-285
- https://doi.org/10.1063/1.91072
Abstract
Pulsed‐electron‐beam annealing of moderately‐phosphorus‐doped poly‐silicon films reduces their resistance below that of thermally annealed films under optimum conditions. In heavily doped films, the electron pulse can cause the effective dopant concentration to exceed that corresponding to solid solubility, but the excess dopant does not stay in solution upon subsequent heat treatment.Keywords
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