Effect of Crystal Distortion upon Change of Resistivity of Silicon by Heat Treatment

Abstract

Silicon crystals grown by the Teal-Little method under certain conditions change resistivity upon heat treatment at about 450°C, becoming more $n$-type. When crystals of this type are bent at 1100°C and quenched, heat treatment at 450°C indicates that the distorted regions are more stable than undistorted regions. This suggests that structural defects retard the appearance of $n$-type carriers and may be responsible for variations among samples grown under different conditions.