Submicron three-dimensional infrared GaAs/AlxOy-based photonic crystal using single-step epitaxial growth
- 14 May 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (20), 3024-3026
- https://doi.org/10.1063/1.1372198
Abstract
A relatively simple technique is demonstrated to fabricate three-dimensional face-centered-cubic infrared photonic crystals with submicron feature sizes using GaAs-based technology, single-step epitaxial growth, and lateral wet oxidation. The photonic crystals were fabricated with feature sizes (a) of 1.5 and 0.5 μm. Transmission measurements reveal a stopband centered at 1.0 μm with a maximum attenuation of 10 dB for the submicron (a = 0.5 μm)(a=0.5μm) photonic crystal. This technique is scalable to small photonic crystal periodicity and hence to shorter wavelengths. © 2001 American Institute of PhysicsKeywords
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