Beam-propagation analysis of stripe-geometry semiconductor lasers: Threshold behavior

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Abstract
The axial and lateral variations of the optical mode and carrier-density profiles of a gain-guided double-heterostructure stripe-geometry semiconductor laser are analyzed theoretically using a beam-propagation method based on the fast Fourier transform technique. The numerical results near the laser threshold indicate that the characteristic length lc, over which the lateral mode adjusts itself to small axial variations in the laser structure, is typically in the range 50 μm≲lc≲100 μm.