Gas-source molecular-beam epitaxial growth of InGaAsP for 1.3 μm distributed Bragg reflectors
- 1 March 1992
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 10 (2), 956-958
- https://doi.org/10.1116/1.586099