Lateral and vertical composition control in MOCVD-grown InP/GaInAs(P) structures
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4), 549-554
- https://doi.org/10.1016/0022-0248(91)90519-b
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- MOCVD grown InP/InGaAs structures for optical receiversJournal of Crystal Growth, 1988
- Compositional transients in MOCVD grown III–V heterostructuresJournal of Crystal Growth, 1984