Double quantum well resonant tunnel diodes
- 17 September 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (12), 1260-1261
- https://doi.org/10.1063/1.103503
Abstract
Double quantum well resonant tunnel diodes are demonstrated in InAlAs/InGaAs for the first time. Peak-to-valley ratios of greater than 70:1 at room temperature and 125:1 below 200 K are observed.Keywords
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