Evaluation of lanthanum based gate dielectrics deposited by atomic layer deposition
- 1 January 2005
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 23 (1), 288-297
- https://doi.org/10.1116/1.1849217
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Investigation of high-quality ultra-thin LaAlO3films as high-kgate dielectricsJournal of Physics D: Applied Physics, 2003
- La–silicate gate dielectrics fabricated by solid phase reaction between La metal and SiO2 underlayersApplied Physics Letters, 2003
- Rare-earth oxide thin films as gate oxides in MOSFET transistorsJournal of Solid State Chemistry, 2003
- Characterization of La[sub 2]O[sub 3] and Yb[sub 2]O[sub 3] Thin Films for High-k Gate Insulator ApplicationJournal of the Electrochemical Society, 2003
- MOCVD of High-Dielectric-Constant Lanthanum Oxide Thin FilmsJournal of the Electrochemical Society, 2003
- Properties of Lanthanum Aluminate Thin Film Deposited by MOCVDElectrochemical and Solid-State Letters, 2003
- Atomic layer depositionPublished by Elsevier ,2002
- Vapor Deposition of Metal Oxides and Silicates: Possible Gate Insulators for Future MicroelectronicsChemistry of Materials, 2001
- Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectricsApplied Physics Letters, 2000
- Thermodynamic stability of binary oxides in contact with siliconJournal of Materials Research, 1996