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UV assisted growth of 100 Å thick SiO
2
at 550°C
Home
Publications
UV assisted growth of 100 Å thick SiO
2
at 550°C
UV assisted growth of 100 Å thick SiO
2
at 550°C
AK
A. Kazor
A. Kazor
IB
I.W. Boyd
I.W. Boyd
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23 May 1991
journal article
Published by
Institution of Engineering and Technology (IET)
in
Electronics Letters
Vol. 27
(11)
,
909-911
https://doi.org/10.1049/el:19910570
Abstract
Thin SiO
2
films have been grown by UV irradiation at much higher growth rates (more than 50 times) than those achieved during conventional thermal oxidation.
Keywords
550 DEGC
100 Å
SI-SIO2
UV IRRADIATION
UV ASSISTED GROWTH
GROWTH RATES
SIO2 THIN FILMS
MOS TECHNOLOGY
OXIDATION
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Cited by 14 articles