Geometrical configuration of interstitial oxygen in silicon and in germanium
- 31 March 1994
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 89 (9), 819-822
- https://doi.org/10.1016/0038-1098(94)90740-4
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Phonon spectroscopy of the low energy vibrations of interstitial oxygen in germaniumSolid State Communications, 1993
- Abinitiocalculation of the local vibratory modes of interstitial oxygen in siliconPhysical Review B, 1992
- Nonparametrized tight-binding method for local and extended defects in homopolar semiconductorsPhysical Review B, 1991
- Nonparametrized calculation of the electronic and vibrational structure of amorphousPhysical Review B, 1991
- Oxygen complexes in siliconPhysical Review B, 1991
- Initial applications of the molecular model to compute defect vibrations of oxygen in siliconRadiation Effects and Defects in Solids, 1989
- Equilibrium Geometries and Electronic Structure of Oxygen Related Defects in SiliconMaterials Science Forum, 1989
- Stable atomic geometries of oxygen microclusters in siliconPhysical Review B, 1988
- Atomic oxygen in silicon: The formation of the Si—O—Si bondPhysical Review B, 1987
- Infrared spectrum of interstitial oxygen in siliconApplied Physics Letters, 1984