Enhanced SiGe heterojunction bipolar transistors with 160 GHz-f/sub max/
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Low-noise performance of SiGe heterojunction bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 3 V supply voltage, DC-18 GHz SiGe HBT wideband amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- SiGe-HBTs with high fT at moderate current densitiesElectronics Letters, 1994
- MBE-grown Si/SiGe HBTs with high beta , f/sub T/, and f/sub max/IEEE Electron Device Letters, 1992