Dependence on volume of the phonon frequencies and the ir effective charges of several III-V semiconductors
- 15 October 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 28 (8), 4579-4584
- https://doi.org/10.1103/physrevb.28.4579
Abstract
The mode Grüneisen parameters of the LO and TO Raman phonons of AlN, BN, and BP, and the dependence of on lattice constant have been measured by Raman scattering in a diamond anvil cell. The results for are interpreted by means of pseudopotential calculations of versus lattice constant.
Keywords
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