Using the n-GaAs planar device with a Schottky barrier gate, a high-field dipole domain could be triggered from the high-field region under the Schottky gate by applying a negative pulse to the gate. The figure of trigger capability was obtained to be 24 mA/V for the sample used in experiments, and is possible to get up to 150 mA/V for a suitably designed device. Some fundamental experiments including a pulse regenerator were performed.