Photoluminescence studies of heavily doped CuInTe2 crystals
- 1 September 2003
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 337 (1-4), 369-374
- https://doi.org/10.1016/s0921-4526(03)00429-0
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Deep and edge photoluminescence emission of CuInTe2Physica Status Solidi (b), 2003
- Defect physics of ternary chalcopyrite semiconductorsMaterials Letters, 1999
- On the Shape of the Close-to-Band-Edge Photoluminescent Emission Spectrum in Compensated CuGaSe2Physica Status Solidi (a), 1999
- The Role of Spatial Potential Fluctuations in the Shape of the PL Bands of Multinary Semiconductor CompoundsPhysica Scripta, 1999
- Effect of thermal expansion coefficient on the temperature dependence of the band gap in CuInTe2Materials Letters, 1998
- Characterization of CuIn(Ga)Se2 Thin FilmsPhysica Status Solidi (a), 1998
- Excitation intensity dependence of the near band-edge photoluminescence spectra of CuInTe2 at 4.2 KMaterials Letters, 1998
- Temperature dependence of the photoluminescence spectra of single crystals of CuInTe2Journal of Applied Physics, 1997
- Edge luminescence of direct-gap semiconductorsUspekhi Fizicheskih Nauk, 1981