Ground state properties of the group IV ionic compound silicon carbide
- 31 October 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 56 (2), 177-180
- https://doi.org/10.1016/0038-1098(85)90735-5
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- "Direct" evaluation of the inverse dielectric matrix in semiconductorsPhysical Review B, 1984
- External Fields in the Self-Consistent Theory of Electronic States: A New Method for Direct Evaluation of Macroscopic and Microscopic Dielectric ResponsePhysical Review Letters, 1983
- Structural-energy calculations based on norm-conserving pseudopotentials and localized Gaussian orbitalsPhysical Review B, 1981
- Norm-Conserving PseudopotentialsPhysical Review Letters, 1979
- One-Particle Properties of an Inhomogeneous Interacting Electron GasPhysical Review B, 1966
- Self-Consistent Equations Including Exchange and Correlation EffectsPhysical Review B, 1965
- Inhomogeneous Electron GasPhysical Review B, 1964
- Electronic Spectra of Crystalline Germanium and SiliconPhysical Review B, 1964
- A Note on the Quantum-Mechanical Perturbation TheoryThe Journal of Chemical Physics, 1951
- On the Interaction of Electrons in MetalsPhysical Review B, 1934