Nd:YAG laser annealing of arsenic-implanted silicon: Relaxation of metastable concentrations by means of CO2-laser irradiation
- 1 April 1981
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (4), 2987-2989
- https://doi.org/10.1063/1.329041
Abstract
The relaxation of supersaturated arsenic concentrations resulting from Nd:YAG laser annealing of implanted silicon was investigated, using a thermal post‐treatment with a stationary 40‐W CO2−laser beam. It was found that the relaxation time constant is ∼12 min at 700 °C and ∼20 min at 600 °C.Keywords
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