High-pressure xenon laser at 1730 Å
- 1 July 1973
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 9 (7), 748-755
- https://doi.org/10.1109/jqe.1973.1077732
Abstract
Experimental measurements are reported of optical gain due to stimulated transitions between the lowest-bound diatomic states of xenon (Xe) and the repulsive ground state. The optical gain was greatest at a wavelength of (1730 ± 10) Å, where the effective gain cross section is estimated to be 7 \times 10^{19} cm 2 .Keywords
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